Part Number Hot Search : 
1N3993 T414003 100MR HQ1L2N SCPA2 20010 2SD1554 01130
Product Description
Full Text Search
 

To Download APTGF75DH120T Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 APTGF75DH120T
Asymmetrical - Bridge NPT IGBT Power Module
VBUS VBUS SENSE Q1 G1 CR3
VCES = 1200V IC = 75A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Easy paralleling due to positive TC of VCEsat * Low profile
E1 OUT1 O UT2 Q4 G4 CR2 E4
0/VBUS SENSE
NTC1
0/VBUS
NT C2
VBUS SENSE
G4 E4
OUT2
VBUS
0/VBUS
OUT1
E1 G1
0/VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C
A V W
150A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-5
APTGF75DH120T - Rev 0 January, 2005
Parameter Collector - Emitter Breakdown Voltage
Max ratings 1200 100 75 150 20 500
Unit V
APTGF75DH120T
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 75A Tj = 125C VGE = VCE, IC = 2.5 mA VGE = 20V, VCE = 0V Min Typ 0.1 4 3.2 3.9 Max 2 3.7 6.5 500 Unit mA V V nA
4.5
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 75A R G = 7.5 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 75A R G = 7.5
Min
Typ 5.1 0.7 0.4 120 50 310 20 130 60 360 30 9 4
Max
Unit nF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF(A V) VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 70C
Min 1200
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage
VR=1200V
50% duty cycle
IF = 100A IF = 200A IF = 100A IF = 100A VR = 800V di/dt =200A/s IF = 100A VR = 800V di/dt =200A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
100 2.0 2.3 1.8 420 580 1.2 5.3
2.5 V
trr Qrr
Reverse Recovery Time
ns
APTGF75DH120T - Rev 0 January, 2005
Reverse Recovery Charge
C
APT website - http://www.advancedpower.com
2-5
APTGF75DH120T
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K Min Typ 68 4080 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt
Thermal and package characteristics
Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.25 0.6 150 125 100 4.7 160
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 -40 -40 -40
To heatsink
M5
Package outline
APT website - http://www.advancedpower.com
3-5
APTGF75DH120T - Rev 0 January, 2005
APTGF75DH120T
Typical Performance Curve
Output Characteristics (VGE =15V) Output Characteristics 150
T J = 125C VGE =15V VGE=20V VGE=12V
150 125 100
IC (A)
T J=25C
125 100 IC (A) 75 50
T J=125C
75 50 25 0 0 1 2 3 V CE (V) 4 5 6
VGE=9V
25 0 0 1 2 3 4 V CE (V) 5 6
Transfert Characteristics 150 125 100 E (mJ) IC (A) 75 50 25 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 35 30 25 E (mJ) 20 15 10 5 0 0 10 20 30 40 50 Gate Resistance (ohms) 60 70
Eoff VCE = 600V VGE =15V IC = 75A T J = 125C TJ =25C TJ=125C
Energy losses vs Collector Current 28 24 20 16 12 8 4 0 0 25 50 75 IC (A) Reverse Bias Safe Operating Area 175 150 100 125 150
Eoff VCE = 600V VGE = 15V RG = 7.5 TJ = 125C
Eon
Eon
125 IC (A) 100 75 50 25 0 0 300 600 900 1200 1500 V CE (V)
V GE=15V T J=125C RG =7.5
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 IGBT
APT website - http://www.advancedpower.com
4-5
APTGF75DH120T - Rev 0 January, 2005
APTGF75DH120T
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 IC (A) 80 100
ZVS hard switching ZCS V CE=600V D=50% RG =7.5 T J=125C T C=75C
Forward Characteristic of diode 250 200 150 100 50 0 0 0.5 1 1.5 VF (V) 2 2.5 3
T J=25C
IC (A)
T J=125C
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10
Diode
0.9 0.7
0 0.00001
rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGF75DH120T - Rev 0 January, 2005


▲Up To Search▲   

 
Price & Availability of APTGF75DH120T

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X